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28.11.2005 - Infineon Announces Advanced 90nm Hard Disk Drive Technology | ||
28 Nov 2005 Munich,
Germany/San Jose, Calif. – November 28, 2005 – Infineon Technologies AG
(IFX: FSE, NYSE) today announced availability of an advanced hard disk
drive read channel core, the first integrated circuit (IC) implemented
in the company’s 90 nanometer (nm) process technology. Developed in
cooperation with Hitachi Global Storage Technologies (Hitachi GST), the
read channel core is a milestone on the path to developing
high-integration controller chips for next generation hard disk drives.
“With its first 90nm read channel product Infineon is well on
track to deliver the next generation of ICs for the growing HDD
market,” stated Peter Bauer, member of the management board and head of
Infineon’s Automotive, Industrial and Multimarket business group. “Our
commitment to the market and long presence is based on a broad IP
portfolio which covers allmost all interfaces, low power and
state-of-the-art SOC design methodology, as well as technologies now
becoming very important to the HDD industry such as Non-volatile
memories and Security Chip Card solutions.”
“Migration to 90nm of the Infineon read channel core enables the
HDD industry to meet next generation product requirements, including
higher data rates, reduced power consumption and smaller die-size
leading to advanced SOC solutions at competitive cost. The first tested
read channel core silicon has demonstrated that the PLL is able to
reach up to 3.6GHz speed and that the Analog Front-End signal path
allows for datarates up to 2.7Gb/s. This is an increase of approx. 50%
compared to advanced Read Channels in 130nm technologies,” said Sandro
Cerato, General Manager and Vice President at Infineon ADS - ASIC and
Design Solutions.
The Hard Disk Drive market is expected to grow by almost 30
percent from US Dollar 3.3bn in 2005 to US Dollar 4.5bn in 2009
according to a research by Gartner Dataquest in August 2005 mainly
driven by mobile and desktop applications.
“The development of this read channel technology further
demonstrates Hitachi’s and Infineon’s innovative strengths and
engineering expertise,” said Steven Smith, Senior Director &
General Manager of Rochester MN, Hitachi GST. “Infineon has
demonstrated leadership in silicon development and integration and we
are very pleased with the performance of our first 90nm read channel
implementation.”
The new read channel technology generation supports advanced features such as perpendicular recording and leverages on 2nd
generation Reverse Concatenation coding to deliver state-of-the-art
signal-to-noise-ratio (SNR) performance for significantly improved
storage densities.
Infineon’s 90nm read channel technology leverages on a common
architecture and is applicable to all HDD segments (Enterprise,
Desktop, Mobile and Ultra-Low-Power). The requirements of the different
HDD platforms are achieved by customizing the designs to the specific
target parameters of each market segment.
A second implementation, currently in development for battery
operated applications, targets an exceptionally low power dissipation.
It will also provide superior stand-by power and leakage current
performance thanks to Infineon’s 90nm process technology that is
designed to support handheld applications such as cellular phones.
The new read-write channel has been implemented in Infineon's 90nm
CMOS technology which provides the capabilities of combining high
performance, low power and analog devices in the same silicon for
various applications. Infineon's technology and design system allows
for product specific and cost effective optimizations for mixed signal
and advanced digital signal processing in a single chip ranging from
performance intensive enterprise-class server applications to power
sensitive mobile consumer electronic applications. Key features of the
technology are the ability to integrate multiple threshold voltages and
multiple gate oxide devices with minimum physical gate dimensions down
to 70nm using advanced power saving concepts like active wells,
clock-gating and micro-switches with 6 to 9 layers of Copper
metallization in a single chip.
The new HDD controller from the Infineon ASIC and Design Solutions
Group can be manufactured worldwide in multiple fabs, providing
customers with supply-chain flexibility and opportunity to expand which
is a very important value proposition in the hard drive industry. Fabs
currently offering Infineon's 90nm technology include Infineon's
Dresden fab in Germany and UMC in Taiwan. News Source: Infineon Press Release Links |
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