Con il comunicato stampa di seguito allegato Toshiba Corporation ha annunciato il suo ingresso nel mercato delle memorie NAND a stato solito o SSD (Solid State Disk): i primi prodotti, concepiti in primis per l'impiego con i moderni notebook, saranno mostrati al grande pubblico in occasione del prossimo Consumer Electronics Show - o in breve CES - che si terrà a Las Vegas dal 7 al 10 Gennaio. L'avvio della fase produttiva, prima in sample e poi in volumi, è pianificato per il primo trimestre del prossimo anno.

I primi driver a stato solido di Toshiba, realizzati con l'ausilio della tecnologia NAND con processo produttivo a 56nm, saranno disponibili in tre differenti capacità: 32Gb, 64Gb e 128Gb.

TOKYO--Toshiba Corporation today announced its entry into the emerging market for NAND-flash-based solid state drive (SSD) with a series of products featuring multilevel-cell NAND flash memories. Offered in a range of form factors and densities, Toshiba's solid state drives are designed primarily for notebook PCs. They will be showcased at the Consumer Electronics Show in Las Vegas, from January 7th to 10th. Samples and mass production will follow from the first quarter (January to March) of next year.

Moving NAND-based storage architecture forward, Toshiba's first solid state drives offer three densities: 32 gigabytes (GB), 64GB and 128GB. SSD realize low power consumption, a fast boot time, and lightweight, but market penetration has been held back by low densities and high prices. Toshiba's new SSD integrate an original MLC controller supporting fast read-write speeds, parallel data transfers and wear leveling, and achieve performance levels comparable to those of single-level NAND flash SSD. By applying MLC technology, Toshiba has realized a 128GB density in a 1.8 inch form factor. Toshiba expects the launch of its SSD line-up to speed up acceptance of solid state memory in laptops and digital consumer products, and to widen the horizons of the NAND flash market.

The new products utilize NAND flash memory fabricated with 56nm process technology, along with controller chips and DRAM, on a 70.6mm (L) x 53.6mm (W) x 3.0mm (H) platform. The maximum read speed is 100MB a second, and the maximum write speed of 40MB a second with the SATA2 interface (transfer rate of 3Gbps), which is compliant with high speed serial interface. The operating life is 1,000,000 hours*1.

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